Features
- SiC Power MOSFET
- Low RDS(on)
- High temperature performance
- Silicon carbide (SiC) Schottky diode
- Zero reverse recovery
- Zero forward recovery
- Temperature-independent switching behavior
- Positive temperature coefficient on VF
- Low stray inductance
- Internal thermistor for temperature monitoring
- Aluminum nitride (AlN) substrate for improved thermal performance
- High power and efficiency converters and inverters
- Outstanding performance at high-frequency operation
- Direct mounting to heatsink (isolated package)
- Low junction to case thermal resistance
- Solderable terminals both for power and signal for easy PCB mounting
- Low profile
- RoHS compliant
- Uninterruptible power supplies
- Switched mode power supplies
- EV motor and traction drive
- Welding converters
