MSCSM120SKM11CT3AG

Features

• SiC Power MOSFET
  • High Speed Switching
  • Ultra low loss
  • Low RDS(on)
• Silicon carbide (SiC) Schottky diode
  • Zero reverse recovery
  • Zero forward recovery
  • Temperature-independent switching behavior
  • Positive temperature coefficient on VF
• Very Low stray inductance
• Kelvin source for easy drive
• Internal thermistor for temperature monitoring
• Aluminum nitride (AlN) substrate for improved thermal performance

Benefits

• High efficiency converter
• Outstanding performance at high-frequency operation
• Direct mounting to heatsink (isolated package)
• Low junction to case thermal resistance
• Solderable terminals both for power and signal for easy PCB mounting
• Low profile
• RoHS compliant

Applications

• Uninterruptible power supplies
• Inductor heating and welding
• Solar inverter