MSCSM120TLM08CAG

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MSCSM120TLM08CA Microchip
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Product image for reference only. For precise specifications, refer to datasheet.

Manufacturer: Microchip
Mfg #: MSCSM120TLM08CAG
Richardson RFPD #: MSCSM120TLM08CA
Description: Silicon Carbide MOSFET Modules
Min/Mult: 1
Datasheet MSCSM120TLM08CA Data Sheet
EDA/CAD Models

The MSCSM120TLM08CAG device is a three level inverter 1200V/333A silicon carbide (SiC) MOSFET power module.

Features
  • SiC Power MOSFET: Low RDS(on), High temperature performance
  • SiC Schottky Diode: Zero reverse recovery, Zero forward recovery, Temperature independent switching behavior, Positive temperature coefficient on VF
  • Kelvin source for easy drive
  • Low stray inductance
  • M5 power connectors
  • High level of integration
  • Aluminum Nitride (AlN) substrate for improved thermal performance
Benefits
  • Outstanding performance at high frequency operation
  • Direct mounting to heatsink (isolated package)
  • Low junction-to-case thermal resistance
  • Low profile
  • RoHS compliant
Applications
  • Solar converter
  • Uninterruptible power supplies

Key Attributes Value Search Similar
Voltage (V) 1200
Current (A) 265
Configuration Three level inverter
Package Type SP6C

Other Attributes Value
Rds(on) (mΩ) 6.25

Change Notice

  Microchip_PCN_MFOL-25BUUV104

Datasheets

  MSCSM120TLM08CAG

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 Pricing in (USD)
Unit Price:
1:  $782.5300
25:  $762.3400
100:  Get Quote


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