MSCSM120VR1M11CT6AG


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Product image for reference only. For precise specifications, refer to datasheet.

Manufacturer: Microchip
Mfg #: MSCSM120VR1M11CT6AG
Richardson RFPD #: MSCSM120VR1M11C
Description: Silicon Carbide MOSFET Modules
Min/Mult: 1
Datasheet MSCSM120VR1M11C Data Sheet
EDA/CAD Models

Features
  • SiC Power MOSFET
    • Low RDS(on)
    • High temperature performance
  • SiC Schottky Diode
    • Zero reverse recovery
    • Zero forward recovery
    • Temperature Independent switching behavior
    • Positive temperature coefficient on VF
  • Kelvin source for easy drive
  • Low stray inductance
  • M5 power connectors
  • Internal thermistor for temperature monitoring
  • Aluminum nitride (AlN) substrate for improved thermal performance
Benefits
  • High-power and high-efficiency rectifiers and converters
  • Outstanding performance at high frequency operation
  • Direct mounting to heatsink (isolated package)
  • Low junction-to-case thermal resistance
  • Low profile
  • RoHS compliant
Applications
  • Power factor correction
  • Switched mode power supplies
  • Uninterruptible power supplies

Key Attributes Value Search Similar
Voltage (V) 1200
Current (A) 200
Configuration Vienna Rectifier
Package Type SP6C

Other Attributes Value
Rds(on) (mΩ) 8.3

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Datasheets

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