MSCSM170TLM23C3AG

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MSCSM170TLM23C3 Microchip
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Product image for reference only. For precise specifications, refer to datasheet.

Manufacturer: Microchip
Mfg #: MSCSM170TLM23C3AG
Richardson RFPD #: MSCSM170TLM23C3
Description: Silicon Carbide MOSFET Modules
Min/Mult: 3/1
Datasheet MSCSM170TLM23C3 Data Sheet
EDA/CAD Models

The MSCSM170TLM23C3AG device is a three level inverter 1700V/124A silicon carbide (SiC) MOSFET power module.

Features
  • SiC Power MOSFET: Low RDS(on), High temperature performance
  • SiC Schottky Diode (CR1 and CR2): Zero reverse recovery, Zero forward recovery, Temperature independent switching behavior, Positive temperature coefficient on VF
  • Kelvin source for easy drive
  • Low stray inductance
  • High level of integration
  • Aluminum Nitride (AlN) substrate for improved thermal performance
Benefits
  • Outstanding performance at high frequency operation
  • Direct mounting to heatsink (isolated package)
  • Low junction-to-case thermal resistance
  • Low profile
  • RoHS compliant
  • Solderable terminals both for power and signal for easy PCB mounting
Applications
  • Uninterruptible power supplies

Key Attributes Value Search Similar
Voltage (V) 1700
Current (A) 98
Configuration Three level inverter
Package Type SP3F

Other Attributes Value
Rds(on) (mΩ) 17.5

Datasheets

  MSCSM170TLM23C3AG

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