MSCSM70VM10C4AG


Stock Availability: 3

Product image for reference only. For precise specifications, refer to datasheet.

Manufacturer: Microchip
Mfg #: MSCSM70VM10C4AG
Richardson RFPD #: MSCSM70VM10C4AG
Description: Silicon Carbide MOSFET Modules
Min/Mult: 3/1
Datasheet MSCSM70VM10C4AG Data Sheet
EDA/CAD Models

Features
  • SiC Power MOSFET: Low RDS(on), High temperature performance
  • SiC Schottky Diode: Zero reverse recovery, Zero forward recovery, Temperature independent switching behavior, Positive temperature coefficient on VF
  • Low stray inductance
  • Kelvin emitter for easy drive
  • High level of integration
  • Aluminum Nitride (AlN) substrate for improved thermal performance
Benefits
  • Outstanding performance at high frequency operation
  • Direct mounting to heatsink (isolated package)
  • Low junction-to-case thermal resistance
  • Solderable terminals both for power and signal for easy PCB mounting
  • Low profile
  • RoHS compliant
Applications
  • Plasma and induction heating
  • Uninterruptible power supplies

Key Attributes Value Search Similar
Voltage (V) 700
Current (A) 97
Configuration Vienna Phase Leg
Package Type SP4

Other Attributes Value
Rds(on) (mΩ) 7.5

Datasheets

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Stock: 3 Units

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Pricing in (USD)

Unit Price:
3:  $240.4100
25:  $234.2000
100:  Get Quote