MSCSM70VR1M10CT3AG

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MSCSM70VR1M10CT Microchip
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Product image for reference only. For precise specifications, refer to datasheet.

Manufacturer: Microchip
Mfg #: MSCSM70VR1M10CT3AG
Richardson RFPD #: MSCSM70VR1M10CT
Description: Silicon Carbide MOSFET Modules
Min/Mult: 1
Datasheet MSCSM70VR1M10CT Data Sheet
EDA/CAD Models

Features
  • SiC Power MOSFET: Low RDS(on), High temperature performance
  • SiC Schottky Diode: Zero reverse recovery, Zero forward recovery, Temperature independent switching behavior, Positive temperature coefficient on VF
  • Low stray inductance
  • Kelvin source for easy drive
  • Internal thermistor for temperature monitoring
  • Aluminum Nitride (AlN) substrate for improved thermal performance
Benefits
  • Outstanding performance at high frequency operation
  • High-power and high-efficiency rectifiers and converters
  • Direct mounting to heatsink (isolated package)
  • Low junction-to-case thermal resistance
  • Solderable terminals both for power and signal for easy PCB mounting
  • Low profile
  • RoHS compliant
Applications
  • Power factor correction
  • Switched mode power supplies
  • Uninterruptible power supplies

Key Attributes Value Search Similar
Voltage (V) 700
Current (A) 192
Configuration Vienna Rectifier
Package Type SP3F

Other Attributes Value
Rds(on) (mΩ) 7.5

Datasheets

  MSCSM70VR1M10CT

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