NCP58921MNTWG

Enhanced Mode GaN Power Switch with Integrated Driver

The NCP58921 integrates a high-performance, high frequency, driver utilizing state-of-the-art silicon technology and a 650 V, 50 mOhm Gallium-Nitride (GaN) High Electron Mobility Transistors (HEMT) in a single switch structure. The powerful combination of the Si driver and power GaN HEMT switch provides superior performance compared to monolithic GaN power modules. The NCP58921 integrated implementation significantly reduces circuit and package parasitics while enables more compact design.

Features

• 650 V 50 mOhm GaN HEMT with Integrated Driver
• 30 ns Typical Driver Propagation Delay
• 8x8 mm TQFN26 Package Minimizes Parasitic Inductances
• 2.75 mm Creepage Distance for Maximum Reliability
• Driver Capability Adjust Enables EMI Optimization under Hard Switching
• 6.0 V Driver Clamp Voltage Regulator
• TTL Compatible Schmitt Trigger and Rail-to-Rail PWM Input
• UVLO Protections for VDD and VDDL Supplies
• Up to 200 V/ns dV/dt Slew Rate Transient Immunity
• 20 V Maximum VDD Ratings
• +5 V LDO Output to Supply Digital Insulators, Current up to 20 mA
• Pb-Free, Halogen Free and RoHS Compliant

Typical Applications

• Power Conversion
• High Power Density Power Supplies
• All Double-ended Topologies: Half-bridges, Full-bridge, LLC
• Active Clamp Flyback
• High-Voltage Synchronous Buck Converter
• High-Voltage Synchronous Boost Converter
• Two-Switch Forward Converter
• Two-Switch Flyback Converter
• Synchronous PFC Stage
• Totem Pole PFC