NCP58922MNTWG

Enhanced Mode GaN Power Switch with Integrated Driver

The NCP58922 integrates a high-performance, high frequency, Silicon (Si) driver and a 650 V, 78 mOhm Gallium-Nitride (GaN) High Electron Mobility Transistors (HEMT) in a single switch structure. The powerful combination of the Si Driver and power GaN HEMT Switch provides superior performance compared to discrete solution GaN HEMT and external driver. The NCP58922 integrated implementation significantly reduces circuit and package parasitics while enabling more compact design.

Features

• 650 V 78 mOhm GaN HEMT with Integrated Driver
• 30 ns Typical Driver Propagation Delay
• 8x8 mm TQFN26 Package Minimizes Parasitic Inductances
• 2.75 mm Creepage Distance for Maximum Reliability
• Driver Turn-on Process is Adjustable via External Resistor, which Enables EMI Optimization under Hard Switching Conditions
• GDS Logic Input, that Switches Driver Strength to Easy Accompanying with QR Flyback Controllers or Tweak EMI Signature
• 6.0 V Driver Clamp Voltage Regulator
• TTL Compatible Schmitt Trigger and Rail-to-Rail PWM Input
• UVLO Protections for VDD and VDR Supplies
• Up to 200 V/ns dV/dt Slew Rate Transient Immunity
• 20 V Maximum VDD Ratings
• Pb-Free, Halogen Free and RoHS Compliant

Typical Applications

• Power Conversion
• High Power Density Power Supplies
• All Double-ended Topologies: Half-bridges, Full-bridge, LLC
• Active Clamp Flyback
• High-Voltage Synchronous Buck Converter
• High-Voltage Synchronous Boost Converter
• Synchronous PFC Stage
• Totem Pole PFC