NPT1015B

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NPT1015B MACOM Technology Solutions
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Product image for reference only. For precise specifications, refer to datasheet.

Manufacturer: MACOM Technology Solutions
Mfg #: NPT1015B
Richardson RFPD #: NPT1015B
Description: RF Power Transistor
Min/Mult: 1
Datasheet NPT1015B Data Sheet
EDA/CAD Models

The NPT1015 GaN HEMT is a wideband transistor optimized for DC-2.5 GHz operation. This device is designed for CW, pulsed, and linear operation with output power levels to 50W (47 dBm) in an industry standard metal-ceramic package with a bolt down flange. This product is designed to be reliable, with a low thermal resistance, and rugged, able to withstand extreme mismatch on the input and output with no device damage. ride 28V, 50W, DC-2.5 GHz HEMT

The NPT1015 is a close alternative to Cree CGH40045. Please contact us for support needed to transition your design to Nitronex.


Key Attributes Value Search Similar
Technology GaN
Minimum Frequency (MHz) 0
Maximum Frequency (MHz) 3500
Pout (W) 45
Gain (dB) 13.5
Supply Voltage (V) 28
50 Ohm Matching
Test signal CW
Pulse Width
Duty Cycle
Efficiency (%) 54
P1dB (W)
Psat (W) 53.7
Thermal Resistance (°C/W) 2.1
Package Name AC360B
Package Type Ceramic Flanged

Change Notice

  MACOM PCN-01245

  MACOM PCN-01323

Datasheets

  npt1015b

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