NPT2018

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NPT2018 MACOM Technology Solutions
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Product image for reference only. For precise specifications, refer to datasheet.

Manufacturer: MACOM Technology Solutions
Mfg #: NPT2018
Richardson RFPD #: NPT2018
Description: RF Power Transistor
Min/Mult: 70/1
Datasheet NPT2018 Data Sheet
EDA/CAD Models

The NPT2018 GaN HEMT is a wideband transistor optimized for DC-2.5 GHz operation. This device has been designed for CW, pulsed, and linear operation with output power levels to 12W (41 dBm) in an industry standard surface mount plastic package.


Key Attributes Value Search Similar
Technology GaN
Minimum Frequency (MHz) 0
Maximum Frequency (MHz) 6000
Pout (W) 12.5
Gain (dB) 16.5
Supply Voltage (V) 48
50 Ohm Matching
Test signal CW
Pulse Width
Duty Cycle
Efficiency (%) 60
P1dB (W)
Psat (W) 15.136
Thermal Resistance (°C/W) 6.5
Package Name DFN 6x3
Package Type Plastic SMT

Datasheets

  NPT2018 Datasheet

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70:  $28.6700
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