NTBG015N065SC1


Stock Availability: 800

Product image for reference only. For precise specifications, refer to datasheet.

Manufacturer: onsemi
Mfg #: NTBG015N065SC1
Richardson RFPD #: NTBG015N065SC1
Description: Silicon Carbide MOSFETs
Min/Mult: 1
Datasheet NTBG015N065SC1 Data Sheet
EDA/CAD Models

Silicon Carbide (SiC) MOSFET - EliteSiC, 12 mohm, 650 V, M2, D2PAK-7L

Features
  • Typ. RDS(on)= 12 mOhm at VGS = 18 V, Typ. RDS(on)= 15 mOhm at VGS = 15 V
  • Ultra Low Gate Charge (QG(tot) = 283 nC)
  • Low Effective Output Capacitance (Coss = 424 pF)
  • 100% Avalanche Tested
  • TJ = 175 C
  • This Device is Halide Free and RoHS Compliant with exemption 7a, Pb-Free 2LI (on second level interconnection)
Applications
  • Solar Inverters
  • Uninterruptable Power Supplies
  • Energy Storages
  • SMPS (Switch Mode Power Supplies)

Key Attributes Value Search Similar
Voltage (V) 650
Current (A) 145
Rds(on) (mΩ) 12
Configuration Single SiC MOSFET
Package Type D2PAK7 (TO-263-7L HV)

Datasheets

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Stock: 800 Units

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Pricing in (USD)

Unit Price:
1:  $19.9300
10:  $19.3800
50:  $18.8500
100:  $18.3600
250:  $17.4400
500:  Get Quote