NTBG022N120M3S


Stock Availability: 800

Product image for reference only. For precise specifications, refer to datasheet.

Manufacturer: onsemi
Mfg #: NTBG022N120M3S
Richardson RFPD #: NTBG022N120M3S
Description: Silicon Carbide MOSFETs
Min/Mult: 1
Datasheet NTBG022N120M3S Data Sheet
EDA/CAD Models

Silicon Carbide (SiC) MOSFET - EliteSiC, 22 mohm, 1200 V, M3S, D2PAK-7L

Features
  • Typ. RDS(on)= 22 mOhm at VGS = 18 V
  • Ultra Low Gate Charge (QG(tot) = 142 nC)
  • High Speed Switching with Low Capacitance (Coss = 146 pF)
  • 100% Avalanche Tested
  • These Devices are RoHS Compliant
Applications
  • Solar Inverters
  • Electric Vehicle Charging Stations
  • Uninterruptable Power Supplies
  • Energy Storage Systems
  • SMPS (Switch Mode Power Supplies)

Key Attributes Value Search Similar
Voltage (V) 1200
Current (A) 72
Rds(on) (mΩ) 22
Configuration Single SiC MOSFET
Package Type D2PAK7 (TO-263-7L HV)

Change Notice
Datasheets

Stock

Ready for Immediate Shipment

Stock: 800 Units

Order

Pricing in (USD)

Unit Price:
1:  $12.3100
10:  $11.9700
50:  $11.6500
100:  $11.3400
250:  $10.7800
500:  Get Quote