NTBG070N120M3S

Stock Availability: 1,600

NTBG070N120M3S onsemi
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Product image for reference only. For precise specifications, refer to datasheet.

Manufacturer: onsemi
Mfg #: NTBG070N120M3S
Richardson RFPD #: NTBG070N120M3S
Description: Silicon Carbide MOSFETs
Min/Mult: 800/1
Datasheet NTBG070N120M3S Data Sheet
EDA/CAD Models

Silicon Carbide (SiC) MOSFET - EliteSiC, 65 mohm, 1200 V, M3S, D2PAK-7L

Features
  • Typ. RDS(on)= 65 mOhm at VGS = 18 V
  • Ultra Low Gate Charge (QG(tot) = 57 nC)
  • High Speed Switching with Low Capacitance (Coss = 57 pF)
  • 100% Avalanche Tested
  • This Device is Halide Free and RoHS Compliant with exemption 7a, Pb-Free 2LI (on second level interconnection)
Applications
  • Solar Inverters
  • Electric Vehicle Charging Stations
  • Uninterruptable Power Supplies
  • Energy Storage Systems
  • SMPS (Switch Mode Power Supplies)

Key Attributes Value Search Similar
Voltage (V) 1200
Current (A) 36
Rds(on) (mΩ) 65
Configuration Single SiC MOSFET
Package Type D2PAK7 (TO-263-7L HV)

Datasheets

  NTBG070N120M3S

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Stock: 1,600 Units

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