NTH4L022N120M3S

Stock Availability: 900

NTH4L022N120M3S onsemi
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Product image for reference only. For precise specifications, refer to datasheet.

Manufacturer: onsemi
Mfg #: NTH4L022N120M3S
Richardson RFPD #: NTH4L022N120M3S
Description: Silicon Carbide MOSFETs
Min/Mult: 1
Datasheet NTH4L022N120M3S Data Sheet
EDA/CAD Models

Silicon Carbide (SiC) MOSFET – EliteSiC, 22 mohm, 1200 V, M3S, TO-247-4L

Features
  • Typ. RDS(on)= 22 mOhm at VGS = 18 V
  • Ultra Low Gate Charge (QG(tot) = 137 nC)
  • High Speed Switching with Low Capacitance (Coss = 146 pF)
  • 100% Avalanche Tested
  • This Device is Halide Free and RoHS Compliant with exemption 7a, Pb-Free 2LI (on second level interconnection)
Applications
  • Solar Inverters
  • Electric Vehicle Charging Stations
  • Uninterruptable Power Supplies
  • Energy Storage Systems
  • SMPS (Switch Mode Power Supplies)

Key Attributes Value Search Similar
Voltage (V) 1200
Current (A) 89
Rds(on) (mΩ) 22
Configuration Single SiC MOSFET
Package Type TO-247-4

Change Notice

  onsemi_PCN_FPCN26435X

Datasheets

  NTH4L022N120M3S

Stock

 Ready for Immediate Shipment
Stock: 900 Units

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 Pricing in (USD)
Unit Price:
1:  $12.4300
10:  $12.0800
50:  $11.7600
100:  $11.4500
250:  $10.8800
500:  Get Quote