NTH4L023N065M3S


Stock Availability: 450

Product image for reference only. For precise specifications, refer to datasheet.

Manufacturer: onsemi
Mfg #: NTH4L023N065M3S
Richardson RFPD #: NTH4L023N065M3S
Description: Silicon Carbide MOSFETs
Min/Mult: 450/1
Datasheet NTH4L023N065M3S Data Sheet
EDA/CAD Models

Silicon Carbide (SiC) MOSFET - EliteSiC, 23 mohm, 650 V, M3S, TO-247-4L

Features
  • Typ. RDS(on)= 23 mOhm at VGS = 18 V
  • Ultra Low Gate Charge (QG(tot) = 69 nC)
  • High Speed Switching with Low Capacitance (Coss = 153 pF)
  • 100% Avalanche Tested
  • This Device is Halide Free and RoHS Compliant with exemption 7a, Pb-Free 2LI (on second level interconnection)
Applications
  • Solar Inverters
  • Electric Vehicle Charging Stations
  • Uninterruptable Power Supplies
  • Energy Storage Systems
  • SMPS (Switch Mode Power Supplies)

Key Attributes Value Search Similar
Voltage (V) 650
Current (A) 67
Rds(on) (mΩ) 23
Configuration Single SiC MOSFET
Package Type TO-247-4

Datasheets

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Stock: 450 Units

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1:  $5.5700