NVBG030N120M3S


Stock Availability: 1,600

Product image for reference only. For precise specifications, refer to datasheet.

Manufacturer: onsemi
Mfg #: NVBG030N120M3S
Richardson RFPD #: NVBG030N120M3S
Description: Silicon Carbide MOSFETs
Min/Mult: 1
Datasheet NVBG030N120M3S Data Sheet
EDA/CAD Models

Silicon Carbide (SiC) MOSFET - EliteSiC, 29 mohm, 1200 V, M3S, D2PAK-7L

Features
  • Typ. RDS(on)= 29 mOhm at VGS = 18 V
  • Ultra Low Gate Charge (QG(tot) = 107 nC)
  • High Speed Switching with Low Capacitance (Coss = 106 pF)
  • 100% Avalanche Tested
  • AEC-Q101 Qualified and PPAP Capable
  • This Device is Halide Free and RoHS Compliant with Exemption 7a, Pb-Free 2LI (on Second Level Interconnection)
Applications
  • Automotive On Board Charger
  • Automotive DC/DC Converter for EV/HEV

Key Attributes Value Search Similar
Voltage (V) 1200
Current (A) 77
Rds(on) (mΩ) 29
Configuration Single SiC MOSFET
Package Type D2PAK7 (TO-263-7L HV)

Datasheets

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Stock: 1,600 Units

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Unit Price:
1:  $17.3300
10:  $16.8500
50:  $16.3900
100:  $15.9600
250:  $15.1600
500:  Get Quote