NVH4L030N120M3S


Stock Availability: 900

Product image for reference only. For precise specifications, refer to datasheet.

Manufacturer: onsemi
Mfg #: NVH4L030N120M3S
Richardson RFPD #: NVH4L030N120M3S
Description: Silicon Carbide MOSFETs
Min/Mult: 1
Datasheet NVH4L030N120M3S Data Sheet
EDA/CAD Models

Silicon Carbide (SiC) MOSFET - EliteSiC, 29 mohm, 1200 V, M3S, TO-247-4L

Features
  • Typ. RDS(on)= 29 mOhm at VGS = 18 V
  • Ultra Low Gate Charge (QG(tot) = 107 nC)
  • High Speed Switching with Low Capacitance (Coss = 106 pF)
  • 100% Avalanche Tested
  • AEC-Q101 Qualified and PPAP Capable
  • This Device is Halide Free and RoHS Compliant with Exemption 7a, Pb-Free 2LI (on Second Level Interconnection)
Applications
  • Automotive On Board Charger
  • Automotive DC/DC Converter for EV/HEV

Key Attributes Value Search Similar
Voltage (V) 1200
Current (A) 73
Rds(on) (mΩ) 29
Configuration Single SiC MOSFET
Package Type TO-247-4

Datasheets

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Stock: 900 Units

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Pricing in (USD)

Unit Price:
1:  $17.9000
10:  $17.4000
50:  $16.9300
100:  $16.4900
250:  $15.6600
500:  Get Quote