NXH004P120M3F2PTNG

Silicon Carbide (SiC) Module - EliteSiC, 4 mohm SiC M3 MOSFET, 1200 V, 2-PACK Half Bridge Topology, F2 Package with Si3N4 DBC

The NXH004P120M3F2PTNG is a power module containing 4 mOhm / 1200 V SiC MOSFET half-bridge and a thermistor with Si3N4 DBC in an F2 package.

• 4 mOhm / 1200 V M3S SiC MOSFET Half-Bridge
• Si3N4 DBC
• Thermistor
• Pre-Applied Thermal Interface Material (TIM)
• Press-Fit Pins
• These Devices are Pb-Free, Halide Free and are RoHS Compliant

• Solar Inverter
• Electric Vehicle Charging Stations
• Uninterruptable Power Supplies
• Industrial Power