NXH004P120M3F2PNG


Stock Availability: 20

Product image for reference only. For precise specifications, refer to datasheet.

Manufacturer: onsemi
Mfg #: NXH004P120M3F2PNG
Richardson RFPD #: NXH004P120M3F2P
Description: Silicon Carbide MOSFET Modules
Min/Mult: 20/1
Datasheet NXH004P120M3F2P Data Sheet
EDA/CAD Models

Silicon Carbide (SiC) Module - EliteSiC, 4 mohm, SiC M3 MOSFET, 1200 V, 2-PACK Half Bridge Topology, F2 Package with Si3N4 DBC

The NXH004P120M3F2PNG is a power module containing 4 mOhm / 1200 V SiC MOSFET half-bridge and a thermistor with Si3N4 DBC in an F2 package.

Features

  • 4 mOhm / 1200 V M3S SiC MOSFET Half-Bridge
  • Si3N4 DBC
  • Thermistor
  • Press-Fit Pins
  • These Devices are Pb-Free, Halide Free and are RoHS Compliant

Applications

  • Solar Inverter
  • Electric Vehicle Charging Stations
  • Uninterruptable Power Supplies
  • Industrial Power

Key Attributes Value Search Similar
Voltage (V) 1200
Current (A)
Configuration
Package Type

Datasheets

Stock

Ready for Immediate Shipment

Stock: 20 Units

Order

Pricing in (USD)

Unit Price:
1:  $192.3700