NXH007F120M3F2PTHG

Stock Availability: 40

NXH007F120M3F2P onsemi
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Product image for reference only. For precise specifications, refer to datasheet.

Manufacturer: onsemi
Mfg #: NXH007F120M3F2PTHG
Richardson RFPD #: NXH007F120M3F2P
Description: Silicon Carbide MOSFET Modules
Min/Mult: 20/1
Datasheet NXH007F120M3F2P Data Sheet
EDA/CAD Models

Silicon Carbide (SiC) Module - EliteSiC, 7 mohm, 1200 V, SiC M3S MOSFET, Full Bridge, F2 Package

The NXH007F120M3F2PTHG is a power module containing 7 mOhm/ 1200 V SiC MOSFET full-bridge and a thermistor with HPS DBC in an F2 package.

Features

  • 7 mOhm / 1200 V M3S SiC MOSFET Full-Bridge
  • HPS DBC
  • Thermistor
  • Options with Pre-Applied Thermal Interface Material (TIM) and without Pre-Applied TIM
  • Press-Fit Pins
  • These Devices are Pb-Free, Halide Free and are RoHS Compliant

Applications

  • Solar Inverter
  • Electric Vehicle Charging Stations
  • Uninterruptable Power Supplies
  • Industrial Power

Key Attributes Value Search Similar
Voltage (V) 1200
Current (A) 149
Configuration Full Bridge
Package Type PIM34

Datasheets

  nxh007f120m3f2-d

  NXH007F120M3F2PTHG

User Guide

  Evaluation Board for 1200 V M3S 4-PACK SiC Module

Stock

 Ready for Immediate Shipment
Stock: 40 Units

Order

 Pricing in (USD)
Unit Price:
1:  $146.3600