Silicon Carbide (SiC) Module, 8 mohm SiC M3S MOSFET, 1200 V, 2-PACK Half Bridge Topology, F1 Package
The NXH008P120M3F1 is a power module containing 8 mOhm/ 1200 V SiC MOSFET half-bridge and a thermistor in an F1 package.
Features
- 8 mOhm / 1200 V M3S SiC MOSFET Half-Bridge
- Thermistor
- Options with Pre-Applied Thermal Interface Material (TIM) and without Pre-Applied TIM
- Press-Fit Pins
- These Devices are Pb-Free, Halide Free and are RoHS Compliant
Applications
- Solar Inverter
- Electric Vehicle Charging Stations
- Uninterruptable Power Supplies
- Industrial Power
