NXH011F120M3F2PTHG

Stock Availability: 40

NXH011F120M3F2P onsemi
Enlarge

Product image for reference only. For precise specifications, refer to datasheet.

Manufacturer: onsemi
Mfg #: NXH011F120M3F2PTHG
Richardson RFPD #: NXH011F120M3F2P
Description: Silicon Carbide MOSFET Modules
Min/Mult: 20/1
Datasheet NXH011F120M3F2P Data Sheet
EDA/CAD Models

Silicon Carbide (SiC) Module, EliteSiC, 11 mohm, 1200 V, SiC M3S MOSFET, Full Bridge, F2 Package

The NXH011F120M3F2PTHG is a power module containing 11 mOhm / 1200 V SiC MOSFET full−bridge and a thermistor with HPS DBC in an F2 package.

Features

  • 11 mOhm / 1200 V M3S SiC MOSFET Full-Bridge
  • HPS DBC
  • Thermistor
  • Options with Pre-Applied Thermal Interface Material (TIM) and without Pre-Applied TIM
  • Press-Fit Pins
  • These Devices are Pb-Free, Halide Free and are RoHS Compliant

Applications

  • Solar Inverter
  • Electric Vehicle Charging Stations
  • Uninterruptable Power Supplies
  • Industrial Power

Key Attributes Value Search Similar
Voltage (V) 1200
Current (A) 105
Configuration Full Bridge
Package Type PIM34

Datasheets

  nxh011f120m3f2pt-d

  NXH011F120M3F2PTHG

User Guide

  Evaluation Board for 1200 V M3S 4-PACK SiC Module

Stock

 Ready for Immediate Shipment
Stock: 40 Units

Order

 Pricing in (USD)
Unit Price:
1:  $110.2500