NXH100B120H3Q0SG

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NXH100B120H3Q0S onsemi
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Product image for reference only. For precise specifications, refer to datasheet.

Manufacturer: onsemi
Mfg #: NXH100B120H3Q0SG
Richardson RFPD #: NXH100B120H3Q0S
Description: Silicon Carbide/Silicon Hybrid Modules
Min/Mult: 24/1
Datasheet NXH100B120H3Q0S Data Sheet
EDA/CAD Models

The NXH100B120H3Q0 is a power module containing a dual boost stage. The integrated field stop trench IGBTs and SiC Diodes provide lower conduction losses and switching losses, enabling designers to achieve high efficiency and superior reliability.

Features
  • 1200 V Ultra Field Stop IGBTs
  • Low Reverse Recovery and Fast Switching SiC Diodes
  • 1600 V Bypass and Anti-Parallel Diodes
  • Low Inductive Layout
  • Solderable Pins or Press-Fit Pins
  • Thermistor
  • Options with Pre-Applied Thermal Interface Material (TIM) and Without Pre-Applied TIM
Applications
  • Solar Inverter
  • Uninterruptible Power Supplies
  • Energy Storage Systems

Key Attributes Value Search Similar
Voltage (V) 1200
Current (A) 50
Configuration Dual Boost
Package Type Q0

Change Notice

  onsemi_PCN_PB25943XB

Datasheets

  NXH100B120H3Q0

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Unit Price:
1:  $47.3800


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