NXH200T120H3Q2F2STNG

Stock Availability: 0

NXH200T120H3Q2N onsemi
Enlarge

Product image for reference only. For precise specifications, refer to datasheet.

Manufacturer: onsemi
Mfg #: NXH200T120H3Q2F2STNG
Richardson RFPD #: NXH200T120H3Q2N
Description: Silicon Carbide/Silicon Hybrid Modules
Min/Mult: 36/1
Datasheet NXH200T120H3Q2N Data Sheet
EDA/CAD Models

The NXH200T120H3Q2F2STNG is a power module containing a split T-type neutral point clamped three-level inverter. The integrated field stop trench IGBTs and SiC Diodes provide lower conduction losses and switching losses, enabling designers to achieve high efficiency and superior reliability.

Features
  • Split T-type Neutral Point Clamped Three-level Inverter Module
  • 1200 V Ultra Field Stop IGBTs and 650 V FS4 IGBTs
  • 650 V SiC Diodes
  • Low Inductive Layout
  • Solderable Pins
  • Thermistor
  • Pre-Applied Thermal Interface Material (TIM) (optional)
  • Nickel Plated DBC
Applications
  • Solar Inverter
  • Uninterruptible Power Supplies

Key Attributes Value Search Similar
Voltage (V) 1200
Current (A) 200
Configuration Split T-Type
Package Type Q2

Change Notice

  onsemi_PCN_PB25943XB

Datasheets

  NXH200T120H3Q2F2STNG

Stock

 Request Quote for Lead Time

Order

 Pricing in (USD)
Unit Price:
1:  $116.9100


Please notify me when stock becomes available!