NXH240B120H3Q1S1G

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NXH240B120H3Q1S onsemi
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Product image for reference only. For precise specifications, refer to datasheet.

Manufacturer: onsemi
Mfg #: NXH240B120H3Q1S1G
Richardson RFPD #: NXH240B120H3Q1S
Description: Silicon Carbide/Silicon Hybrid Modules
Min/Mult: 21/1
Datasheet NXH240B120H3Q1S Data Sheet
EDA/CAD Models

The NXH240B120H3Q1 is a case power module containing a three channel BOOST stage. The integrated field stop trench IGBTs and SiC Diodes provide lower conduction losses and switching losses, enabling designers to achieve high efficiency and superior reliability.

Features
  • 1200 V Ultra Field Stop IGBTs
  • Low Reverse Recovery and Fast Switching SiC Diodes
  • Low Inductive Layout
  • Press−fit Pins / Solder Pins
  • Thermistor
Applications
  • Solar Inverter
  • ESS

Key Attributes Value Search Similar
Voltage (V) 1200
Current (A) 92
Configuration Triple
Package Type Q1

Change Notice

  onsemi_PCN_PB25943XB

Datasheets

  NXH240B120H3Q1P1G

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 Pricing in (USD)
Unit Price:
1:  $78.5900


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