NXH350N100H4Q2F2S1G

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NXH350N100H42S1 onsemi
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Product image for reference only. For precise specifications, refer to datasheet.

Manufacturer: onsemi
Mfg #: NXH350N100H4Q2F2S1G
Richardson RFPD #: NXH350N100H42S1
Description: Silicon Carbide/Silicon Hybrid Modules
Min/Mult: 36/1
Datasheet NXH350N100H42S1 Data Sheet
EDA/CAD Models

This high-density, integrated power module combines high-performance IGBTs with rugged anti-parallel diodes.

Features
  • Extremely Efficient Trench with Field Stop Technology
  • Low Switching Loss Reduces System Power Dissipation
  • Module Design Offers High Power Density
  • Low Inductive Layout
  • Low Package Height
  • These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant
Applications
  • Solar Inverter
  • Uninterruptible Power Supplies System

Key Attributes Value Search Similar
Voltage (V) 1000
Current (A) 375
Configuration I-Type
Package Type Q2

Change Notice

  onsemi_PCN_PB25943XB

Datasheets

  NXH350N100H4Q2F2P1G

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 Pricing in (USD)
Unit Price:
1:  $154.5000


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