NXH600B100H4Q2F2SG


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Product image for reference only. For precise specifications, refer to datasheet.

Manufacturer: onsemi
Mfg #: NXH600B100H4Q2F2SG
Richardson RFPD #: NXH600B100H4QSG
Description: Silicon Carbide/Silicon Hybrid Modules
Min/Mult: 36/1
Datasheet NXH600B100H4QSG Data Sheet
EDA/CAD Models

The NXH600B100H4Q2 is a Si/SiC Hybrid three channel symmetric boost module. Each channel contains two 1000 V, 200 A IGBTs, and two 1200 V, 60 A SiC diodes. The module contains an NTC thermistor.

Features
  • Extremely Efficient Trench with Field Stop Technology
  • Low Switching Loss Reduces System Power Dissipation
  • Module Design Offers High Power Density
  • Low Inductive Layout
  • Low Package Height
  • Pb-Free, Halogen Free/BFR Free and RoHS Compliant
Applications
  • Solar Inverter
  • Uninterruptible Power Supplies Systems

Key Attributes Value Search Similar
Voltage (V) 1000
Current (A) 192
Configuration
Package Type PIM44, 93x47 (SOLDER PIN)

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Datasheets

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Unit Price:
1:  $164.2100


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