NXH800H120L7QDSG

Stock Availability: 24

NXH800H120L7QDS onsemi
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Product image for reference only. For precise specifications, refer to datasheet.

Manufacturer: onsemi
Mfg #: NXH800H120L7QDSG
Richardson RFPD #: NXH800H120L7QDS
Description: Power IGBT Transistor
Min/Mult: 24/1
Datasheet NXH800H120L7QDS Data Sheet
EDA/CAD Models

The NXH800H120L7QDSG is a 1200 V 800 A rated half bridge IGBT power module. The integrated Field Stop Trench 7 IGBTs and Gen. 7 diodes provide lower conduction losses and switching losses, enabling designers to achieve high efficiency and superior reliability.

Features

  • 1200 V, 800 A 2 in 1 Half Bridge Configuration IGBT Power Module
  • Field Stop Trench 7 IGBTs and Gen.7 Diodes
  • NTC Thermistor
  • Isolated Base Plate
  • Solderable Pins
  • Low Inductive Layout
  • This is a Pb-Free Device

Typical Applications

  • Motor Drives
  • Servo Drives
  • Solar Drives
  • Uninterruptible Power Supply Systems (UPS)

Key Attributes Value Search Similar
Configuration Half Bridge
Voltage (V) 1200
Current (A) 800
Package Type PIM11

Change Notice

  Onsemi_PCN_FPCN26403X

Datasheets

  NXH800H120L7QDSG

Stock

 Ready for Immediate Shipment
Stock: 24 Units

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 Pricing in (USD)
Unit Price:
1:  $172.8200