EK29100-03


Stock Availability: 0

Product image for reference only. For precise specifications, refer to datasheet.

Manufacturer: pSemi
Mfg #: EK29100-03
Richardson RFPD #: PE29100EK
Description: GaN Power Transistor Test/Evaluation Product
Min/Mult: 1
Datasheet PE29100EK Data Sheet
EDA/CAD Models

The PE29100 integrated high-speed driver is designed to control the gates of external power devices, such as enhancement mode gallium nitride (eGaN®) FETs. The outputs of the PE29100 are capable of providing switching transition speeds in the sub-nanosecond range for hard switching applications up to 33 MHz. High switching speeds result in smaller peripheral components and enable new applications like the Rezence A4WP wireless power transfer. The PE29100 is available in a flip chip package.

The PE29100 is manufactured on Peregrine’s UltraCMOS process, a patented variation of silicon-on-insulator (SOI) technology on a sapphire substrate, offering the performance of GaAs with the economy and integration of conventional CMOS.

See PE29100A for bulk

See PE29100A-X for 500-piece reel

Download User Manual


Key Attributes Value Search Similar
Description PE29100 integrated high-speed driver

Stock

Request Quote for Lead Time

Order

Pricing in (USD)

Unit Price:
1:  $50.0000


Please notify me when stock becomes available!