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Product image for reference only. For precise specifications, refer to datasheet.
The PE29100 integrated high-speed driver is designed to control the gates of external power devices, such as enhancement mode gallium nitride (eGaN®) FETs. The outputs of the PE29100 are capable of providing switching transition speeds in the sub-nanosecond range for hard switching applications up to 33 MHz. High switching speeds result in smaller peripheral components and enable new applications like the Rezence A4WP wireless power transfer. The PE29100 is available in a flip chip package.
The PE29100 is manufactured on Peregrine’s UltraCMOS process, a patented variation of silicon-on-insulator (SOI) technology on a sapphire substrate, offering the performance of GaAs with the economy and integration of conventional CMOS.
See PE29100A for bulk
See PE29100A-X for 500-piece reel
Download User Manual
Considerations Using PE29100 EVB with EPC8009
PE29100 Datasheet
PE29100EK User Manual
PE29100 High-speed GaN FET Driver
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