PXAE213708NB-V1-R2


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Manufacturer: MACOM Technology Solutions
Mfg #: PXAE213708NB-V1-R2
Richardson RFPD #: PXAE213708NB-V1
Description: RF Power Transistor
Min/Mult: 1
Datasheet PXAE213708NB-V1 Data Sheet
EDA/CAD Models

The PXAE213708NB is a 400-watt LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 2110 to 2180 MHz frequency band. Features include input matching, high gain and thermally enhanced package with earless flange. Manufactured with advanced LDMOS process, this device provides excellent thermal performance and superior reliability.


Key Attributes Value Search Similar
Technology LDMOS
Minimum Frequency (MHz) 2110
Maximum Frequency (MHz) 2180
Pout (W) 54
Gain (dB) 16
Supply Voltage (V) 29
50 Ohm Matching
Test signal WCDMA
Pulse Width
Duty Cycle
Efficiency (%) 51
P1dB (W)
Psat (W) 400
Thermal Resistance (°C/W) 0.6
Package Name PG-HB2SOF-8-1
Package Type Plastic Flangeless

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