SI82E29ABE-IS3R


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Product image for reference only. For precise specifications, refer to datasheet.

Manufacturer: Skyworks Solutions, Inc.
Mfg #: SI82E29ABE-IS3R
Richardson RFPD #: SI82E29ABE3R
Description: Gate Driver IC
Min/Mult: 1,250/1
Datasheet SI82E29ABE3R Data Sheet
EDA/CAD Models

The new Si82Ex family are isolated gate drive solutions for power switch driving needs, including Silicon MOSFET, IGBT, SiC, and GaN. All devices in this family include proven voltage mode gate drive architectures with a variety of CMOS inputs with deglitch options, dual channels with universal or high-side/low-side configuration, and assorted UVLOs suitable for the power switch type being driven. With outstanding isolation ratings of up to 6kV and compliance to VDE 60747-17, AEC-Q100 qualifications and automotive-grade options, and a variety of popular packaging options, this device family has a match for your isolated gate drive needs.


Key Attributes Value Search Similar
Number of Channels 2
Peak Output Current 6
Maximum Output Voltage (V) 30
Minimum Output Voltage (V) 5
CMTI (kV/us) 200
Miller Clamp No

Other Attributes Value
Configuration Universal
Maximum Operating Temperature (°C) 125
Input Type VIA, VIB
Minimum Operating Temperature (°C) -40
Package Type WB SOIC-14
UVLO 8 V
Propagation Delay (ns) 40

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1:  $2.8100


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