SKM300GB124D

Low Loss IGBT Module|•MOS input (voltage controlled)|•N channel, homogeneous Si structure (NPT-Non Punch-Through IGBT)|•Low inductance case|•Very low tail current with low temperature dependence|•High short circuit capability, self limiting to 6 x Icnom|•Latch-up free|•Fast & soft inverse CAL diodes|•Isolated copper baseplate using DCB Direct Copper Bonding Technology|•Large clearance (12 mm) and creepage distances (20 mm)|Typical Applications:|•Switching (not for linear use)|•AC inverter drives|•UPS