UF3C065030T3S

onsemi’s cascode products co-package its high performance G3 SiC JFETs with a cascode optimized MOSFET to produce the only standard gate drive SiC device in the market today. This series exhibits ultra-low gate charge, but also the best reverse recovery characteristics of any device of similar ratings. These devices are excellent for switching inductive loads when used with recommended RC-snubbers, and any application requiring standard gate drive.

• Typical On-resistance RDS(on),typ of 27 mOhm
• Maximum Operating Temperature of 175 C
• Excellent Reverse Recovery
• Low Gate Charge
• Low Intrinsic Capacitance
• ESD Protected, HBM Class 2
• Very low switching losses (required RC-snubber loss negligible under typical operating conditions)

• EV Charging
• PV Inverters
• Switch Mode Power Supplies
• Power Factor Correction Modules
• Motor Drives
• Induction Heating