UF3C065080K4S

onsemi’s cascode products co-package its high performance F3 SiC fast JFETs with a cascode optimized MOSFET to produce the only standard gate drive SiC device in the market today. This series exhibits very fast switching using a 4-terminal TO247- package and the best reverse recovery characteristics of any device of similar ratings. These devices are excellent for switching inductive loads, and any application requiring standard gate drive.

• Typical On-resistance RDS(on),typ of 80 mOhm
• Maximum Operating Temperature of 175 C
• Excellent Reverse Recovery
• Low Gate Charge
• Low Intrinsic Capacitance
• ESD Protected, HBM Class 2
• TO-247-4L package for faster switching, clean gate waveforms
• This Device is Pb-Free, Halogen Free and is ROHS Compliant

• EV Charging
• PV Inverters
• Switch Mode Power Supplies
• Power Factor Correction Modules
• Motor Drives
• Induction Heating