UF3C120080B7S

This SiC FET device is based on a unique ‘cascode’ circuit configuration, in which a normally-on SiC JFET is co-packaged with a Si MOSFET to produce a normally-off SiC FET device. The device’s standard gate-drive characteristics allows for a true “drop-in replacement” to Si IGBTs, Si FETs, SiC MOSFETs or Si superjunction devices. Available in the TO-263-7 package, this device exhibits ultra-low gate charge and exceptional reverse recovery characteristics, making it ideal for switching inductive loads , and any application requiring standard gate drive.

• Typical On-resistance RDS(on),typ of 85 mOhm
• Maximum Operating Temperature of 175 C
• Excellent Reverse Recovery
• Low Body Diode
• Low Gate Charge
• Threshold Voltage VG(th): 4.8 V (Typ) Allowing 0 to 15 V Drive
• Package Creepage and Clearance Distance greater than 6.1 mm
• Kelvin Source Pin for Optimized Switching Performance
• ESD Protected, HBM Class 2
• This Device is Pb-Free, Halogen Free and is RoHS Compliant

• Telecom and Server Power
• Industrial Power Supplies
• Power Factor Correction Modules
• Motor Drives
• Induction Heating