UF3C170400B7S

This SiC FET device is based on a unique ‘cascode’ circuit configuration, in which a normally-on SiC JFET is co-packaged with a Si MOSFET to produce a normally-off SiC FET device. The device’s standard gatedrive characteristics allows for a true “drop-in replacement” to Si IGBTs, Si FETs, SiC MOSFETs or Si superjunction devices. Available in the TO-263-7 package, this device exhibits ultra-low gate charge and exceptional reverse recovery characteristics, making it ideal for switching inductive loads, and any application requiring standard gate drive.

• Typical On-resistance RDS(on),typ of 410 mOhm
• Maximum Operating Temperature of 175 C
• Excellent Reverse Recovery
• Low body diode
• Low Gate Charge
• Low Intrinsic Capacitance
• ESD Protected, HBM Class 2 and CDM Class C3
• This Device is Halogen Free and RoHS Compliant with Exemption 7a, Pb-Free 2LI (on second level interconnection)

• Switch Mode Power Supplies
• Auxiliary Power Supplies
• Load Switches