UF3SC065007K4S

This SiC FET device is based on a unique ‘cascode’ circuit configuration, in which a normally-on SiC JFET is co-packaged with a Si MOSFET to produce a normally-off SiC FET device. The device’s standard gate-drive characteristics allows for a true “drop-in replacement” to Si IGBTs, Si FETs, SiC MOSFETs or Si superjunction devices. Available in the TO247-4 package, this device exhibits ultra-low gate charge and exceptional reverse recovery characteristics, making it ideal for switching inductive loads, and any application requiring standard gate drive.

• Typical On-resistance RDS(on),typ of 6.7 mOhm
• Maximum Operating Temperature of 175 C
• Excellent Reverse Recovery
• Low Gate Charge
• Low Intrinsic Capacitance
• ESD Protected, HBM Class 2
• TO247-4 package for faster switching, clean gate waveforms

• EV Charging
• PV Inverters
• Switch Mode Power Supplies
• Power Factor Correction Modules
• Motor Drives
• Induction Heating