UF4SC120023B7S

The UF4SC120023B7S is a 1200V, 23mOhm G4 SiC FET. It is based on a unique ‘cascode’ circuit configuration, in which a normally-on SiC JFET is co-packaged with a Si MOSFET to produce a normally-off SiC FET device. The device’s standard gate-drive characteristics allows use of off-the-shelf gate drivers hence requiring minimal redesign when replacing Si IGBTs, Si superjunction devices or SiC MOSFETs. Available in the space-saving D2PAK-7L package which enables automated assembly, this device exhibits ultra-low gate charge and exceptional reverse recovery characteristics, making it ideal for switching inductive loads and any application requiring standard gate drive.

• Typical On-resistance RDS(on),typ of 23 mOhm
• Maximum Operating Temperature of 175 C
• Excellent Reverse Recovery
• Low Body Diode
• Low Gate Charge
• Threshold Voltage VG(th): 4.8 V (Typ) Allowing 0 to 15 V Drive
• Low Intrinsic Capacitance
• ESD Protected: HBM Class 2 and CDM Class C3
• D2PAK-7L package for faster switching, clean gate waveforms

• EV Charging
• PV Inverters
• Switch Mode Power Supplies
• Power Factor Correction Modules
• Induction Heating