UG3SC120009K4S

UG3SC120009K4S "Combo-FET" integrates both a 1200V SiC JFET and a Low Voltage Si MOSFET into a single TO-247-4L package. This innovative approach allows users to create circuitry that would enable a normally-off switch while leveraging the benefits of a normally-on SiC JFET. These benefits include ultra-low on resistance (RDS(on)) to minimize conduction losses and the exceptional robustness characteristic of a simplified JFET device structure, making it capable of handling the high-energy switching required in circuit protection applications. For switch-mode power conversion application, this device provides separate access to the JFET and MOSFET gates for improved speed control and ease of paralleling multiple devices.

• Single digit RDS(on)
• Normally-off capability
• Improved speed control
• Improved parallel device operation (3+ FETs)
• Operating temperature: 175C (max)
• High pulse current capability
• Excellent device robustness
• Silver-sintered die attach for excellent thermal resistance
• Short circuit rated

• Solid State / Semiconductor Circuit Breaker
• Solid State / Semiconductor Relay
• Battery Disconnects
• Surge Protection
• Inrush Current Control
• High power switch mode converters (greater than 25kW)