UG4SC075005L8S


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Product image for reference only. For precise specifications, refer to datasheet.

Manufacturer: onsemi
Mfg #: UG4SC075005L8S
Richardson RFPD #: UG4SC075005L8S
Description: Power JFET Transistor
Min/Mult: 2,000/1
Datasheet UG4SC075005L8S Data Sheet
EDA/CAD Models

UG4SC075005L8S "Combo-FET" integrates both a 750V SiC JFET and a Low Voltage Si MOSFET into a single TOLL package. This innovative approach allows users to create circuitry that would enable a normally-off switch while leveraging the benefits of a normally-on SiC JFET. These benefits include ultra-low on-resistance (RDS(on)) to minimize conduction losses and the exceptional robustness characteristic of a simplified JFET device structure, making it capable of handling the high-energy switching required in circuit protection applications. For switch-mode power conversion application, this device provides separate access to the JFET and MOSFET gates for improved speed control and ease of paralleling multiple devices.

Features
  • Single digit RDS(on)
  • Normally-off capability
  • Improved Speed Control
  • Improved Parallel Device Operation (3+ FETs)
  • Operating Temperature: 175C (max)
  • High Pulse Current Capability
  • Excellent Device Robustness
  • Silver-sintered Die Attach for Excellent Thermal Resistance
  • Short circuit rated
Typical Applications
  • Solid State / Semiconductor Circuit Breaker
  • Solid State / Semiconductor Relay
  • Battery Disconnects
  • Surge Protection
  • Inrush Current Control
  • High power switch mode converters (greater than 25kW)

Key Attributes Value Search Similar
Voltage (V) 750
On-State Resistance (milliΩ) 5
Current (A) 588
Package Type H-PDSO-F8

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