UG4SC075011K4S

onsemi’s UG4SC075011K4S “Combo-FET” integrates both a 750 V SiC JFET and a Low Voltage Si MOSFET into a single TO247-4 Package. This innovative approach allows users to create circuitry that would enable a normally-off switch while leveraging the benefits of a normally-on SiC JFET. These benefits include ultra-low on-resistance (RDS(on)) to minimize conduction losses and the exceptional robustness characteristic of a simplified JFET device structure, making it capable of handling the high-energy switching required in circuit protection applications. For switch-mode power conversion application, this device provides separate access to the JFET and MOSFET gates for improved speed control and ease of paralleling multiple devices.

• Low RDS(on)
• Normally-off capability
• Improved Speed Control
• Improved Parallel Device Operation (3+ FETs)
• Operating Temperature: 175C (max)
• High Pulse Current Capability
• Excellent Device Robustness
• Silver-sintered Die Attach for Excellent Thermal Resistance
• This Device is Pb-Free, Halogen Free and is RoHS Compliant

• Solid State / Semiconductor Circuit Breaker
• Solid State / Semiconductor Relay
• Battery Disconnects
• Surge Protection
• Inrush Current Control
• High power switch mode converters (greater than 25kW)