This SiC FET device is based on a unique ‘cascode’ circuit
configuration, in which a normally-on SiC JFET is co-packaged with a
Si MOSFET to produce a normally-off SiC FET device. The device’s
silicon-like gate-drive characteristics allows the use of unipolar gate
drives, compatible with Si IGBTs, Si FETs, SiC MOSFETs or Si
superjunction devices. Available in the E1B module package, this
device exhibits ultra-low gate charge and exceptional reverse
recovery characteristics, making it ideal for switching inductive
loads, and any application requiring standard gate drive. Advanced
Ag sintering die attach technology gives the module superior thermal
performance.
Features
- Typical On-resistance RDS(on),typ of 9.4 mOhm
- Maximum Operating Temperature of 150 C
- Excellent Reverse Recovery
- Low Body Diode Voltage
- Low Gate Charge
- Threshold voltage VG(th): 5.0V (typ) allowing 0 to 15V drive
- Low Intrinsic Capacitance
- ESD Protected, HBM Class 2 and CDM class C3
Applications
- EV Charging
- PV Inverters
- Switch Mode Power Supplies
- Power Factor Correction Modules
- Motor Drives
- Induction Heating
