UJ3C065030B3

This SiC FET device is based on a unique ‘cascode’ circuit configuration, in which a normally-on SiC JFET is co-packaged with a Si MOSFET to produce a normally-off SiC FET device. The device’s standard gate-drive characteristics allows for a true “drop-in replacement” to Si IGBTs, Si FETs, SiC MOSFETs or Si superjunction devices. Available in the D2PAK-3L package, this device exhibits ultra low gate charge and exceptional reverse recovery characteristics, making it ideal for switching inductive loads and any application requiring standard gate drive.

• Typical On-resistance RDS(on),typ of 27 mOhm
• Maximum Operating Temperature of 175 C
• Excellent Reverse Recovery
• Low Gate Charge
• Low intrinsic capacitance
• ESD Protected: HBM Class 2 and CDM class C3

• EV Charging
• PV Inverters
• Switch Mode Power Supplies
• Power Factor Correction Modules
• Motor Drives
• Induction Heating