UJ4SC075005L8S

The UJ4SC075005L8S is a 750V, 5.4mOhm G4 SiC FET. It is based on a unique ‘cascode’ circuit configuration, in which a normally-on SiC JFET is co-packaged with a Si MOSFET to produce a normally-off SiC FET device. The device’s standard gate-drive characteristics allows use of off-the-shelf gate drivers hence requiring minimal re-design when replacing Si IGBTs, Si superjunction devices or SiC MOSFETs. Available in the space-saving MO-229 package which enables automated assembly, this device exhibits ultra-low gate charge and exceptional reverse recovery characteristics, making it ideal for switching inductive loads and any application requiring standard gate drive.

• Typical On-resistance RDS(on),typ of 5.4 mOhm
• Maximum Operating Temperature of 175 C
• Excellent Reverse Recovery
• Low Body Diode
• Low Gate Charge
• Threshold voltage VG(th): 4.7V (typ) allowing 0 to 15V drive
• Low intrinsic capacitance
• ESD Protected: HBM Class 2
• MO-229 package for faster switching, clean gate waveforms

• Solid state relays and circuit-breakers
• Line rectification and active-bridge rectification circuits in AC/DC front-ends
• EV Charging
• PV Inverters
• Switch Mode Power Supplies
• Power Factor Correction Modules
• Motor Drives
• Induction Heating