The WS1A3640 is an Asymmetric Doherty Power Amplifier Module (PAM) integrating GaN on SiC HEMT transistors with advanced matching and biasing networks on a multilayer laminate substrate with advanced heat sinking technology. The PAM has been designed to operate from 3300 MHz to 3800 MHz; from supply voltages up to 50 V; at average output power levels of 8 to 10 W with crest-factor reduced and digitally pre-distorted LTE and 5G NR signals with instantaneous bandwidths of 200 MHz or more. The device is housed in a 6 mm X 6 mm land grid array (LGA) package.
