WSGPA01-V1-R3K


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Product image for reference only. For precise specifications, refer to datasheet.

Manufacturer: MACOM Technology Solutions
Mfg #: WSGPA01-V1-R3K
Richardson RFPD #: WSGPA01-V1
Description: RF Power Transistor
Min/Mult: 1
Datasheet WSGPA01-V1 Data Sheet
EDA/CAD Models

The WSGPA01 is a GaN on SiC Discrete General Purpose Amplifier (GPA) designed for applications up to 5 GHz. The device operates from supply voltages up to 50 V and can achieve a P3dB of 10 W. It is housed in a 3 mm x 4 mm DFN package. While it is designed for communications infrastructure applications with crest factor reduced and digitally pre-distorted LTE or 5G NR signals, it may be suitable for other applications at frequencies up to 5 GHz, restricted only by its maximum operating conditions


Key Attributes Value Search Similar
Technology GaN
Minimum Frequency (MHz) 0
Maximum Frequency (MHz) 5000
Pout (W) 0.44
Gain (dB) 16
Supply Voltage (V) 48
50 Ohm Matching
Test signal WCDMA
Pulse Width
Duty Cycle
Efficiency (%) 15.7
P1dB (W)
Psat (W) 10
Thermal Resistance (°C/W) 10.1
Package Name PG-DFN-3x4-1
Package Type Plastic SMT

Other Attributes Value
Psat (W) 10

Datasheets

  wsgpa01

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