XB1005-BD-000V

M/A-COM Tech’s three stage 35.0-45.0 GHz GaAs MMIC buffer amplifier has a small signal gain of 23.0 dB with a noise figure of 2.7 dB across the band. This MMIC uses M/A-COM Tech’s GaAs PHEMT device model technology, and is based upon electron beam lithography to ensure high repeatability and uniformity. The chip has surface passivation to protect and provide a rugged part with backside via holes and gold metallization to allow either a conductive epoxy or eutectic solder die attach process. This device is well suited for Millimeter-wave Point-to-Point Radio, SATCOM and VSAT applications.