Mimix Broadband's three stage 17.0-26.0 GHz GaAs MMIC power amplifier has a small signal gain of 19.0 dB with a +23.0 dBm saturated output power. This MMIC uses Mimix Broadband's GaAs PHEMT device model technology, and is based upon electron beam lithography to ensure high repeatability and uniformity. The chip has surface passivation to protect and provide a rugged part with backside via holes and gold metallization to allow either a conductive epoxy or eutectic solder die attach process. This device is well suited for Millimeter-wave Point-to-Point Radio, LMDS, SATCOM and VSAT applications.
