CAB760M12HM3R

1200 V, 760 A, Silicon Carbide High-Performance, Half-Bridge Module

Same electrical performance as the CAB760M12HM3. The R in CAB760M12HM3R designates that the pins are on the right-hand side of the module. This helps in power layout for applications needing parallel modules, in that trace lengths can be reduce due to pin placement.

Technical Features

• Low Inductance, Low Profile 62mm Footprint
• High Junction Temperature (175 C) Operation
• Implements Switching Optimized Third Generation SiC MOSFET Technology
• Light Weight AlSiC Baseplate
• High Reliability Silicon Nitride Insulator

System Benefits

• Lightweight, Compact Form Factor with 62mm Compatible Baseplate Enables System Retrofit
• Increased System Efficiency, due to Low Switching and Conduction Losses of SiC
• High Reliability Material Selection

Applications

• Railway and Traction
• Solar
• EV Chargers
• Industrial Automation and Testing